preliminary maximum ratings (t a =25c) symbol units drain-source voltage v ds 50 v drain-gate voltage v dg 50 v gate-source voltage v gs 20 v continuous drain current i d 280 ma continuous source current (body diode) i s 280 ma maximum pulsed drain current i dm 1.5 a maximum pulsed source current i sm 1.5 a power dissipation (note 1) p d 1.6 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance (note 1) ja 75 c/w electrical characteristics (t a =25c unless otherwise noted) symbol test conditions min max units i gssf v gs =20v, v ds =0v 100 na i gssr v gs =20v, v ds =0v 100 na i dss v ds =50v, v gs =0v 1.0 a i dss v ds =50v, v gs =0v, t j =125c 500 a i d(on) v gs =10v, v ds =10v 500 ma bv dss v gs =0v, i d =10a 50 v CTLDM8002A-M621H surface mount tlm tm p-channel enhancement-mode silicon mosfet tlm621h case central semiconductor corp. tm r0 (15-june 2006) description: the central semiconductor CTLDM8002A-M621H is a very low profile (0.4mm) p-channel enhancement-mode mosfet in a small, thermal efficient, 1.5mm x 2mm tlm? package. notes: (1) mounted on a 4-layer jedec test board with one thermal vias connecting the exposed thermal pad to the first buried plane. pcb was constructed as per jedec standards jesd51-5 and jesd51-7. marking code: cma features: ? low r ds(on) ? low v ds(on) ? low threshold voltage ? fast switching ? logic level compatible ? small, very low profile, tlm? applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment bottom view top view
preliminary central semiconductor corp. tm tlm621h case - mechanical outline CTLDM8002A-M621H surface mount tlm tm p-channel enhancement-mode silicon mosfet r0 (15-june 2006) lead code: 1) source 2) drain 3) drain 4) drain 5) drain 6) gate marking code: cma electrical characteristics - continued (t a =25c unless otherwise noted) symbol test conditions min max units v gs(th) v ds =v gs , i d =250a 1.0 2.5 v v ds(on) v gs =10v, i d =500ma 1.5 v v ds(on) v gs =5.0v, i d =50ma 0.15 v r ds(on) v gs =10v, i d =500ma 2.5 r ds(on) v gs =10v, i d =500ma, t j =125c 4.0 r ds(on) v gs =5.0v, i d =50ma 3.0 r ds(on) v gs =5.0v, i d =50ma, t j =125c 5.0 y fs v ds =10v, i d =200ma 200 msec c rss v ds =25v, v gs =0, f=1.0mhz 7.0 pf c iss v ds =25v, v gs =0, f=1.0mhz 70 pf c oss v ds =25v, v gs =0, f=1.0mhz 15 pf t on v dd =30v, v gs =10v, i d =200ma 20 ns t off r g =25 , r l =150 20 ns v sd v gs =0v, i s =115ma 1.3 v pin configuration:
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